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| NPN 2N2484 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2484 are a silicon planar epitaxial NPN transistors mounted in TO-18 metal package. They are intended for use in high-performance, low-noise amplifier circuits from audio to high-frequency. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC PD TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current @ Tamb = 25 Total Power Dissipation Junction Temperature Storage Temperature range @ Tcase= 25 @ Tcase<100 Ratings Value 60 60 6 50 0.36 1.2 0.68 200 -65 to +200 Unit V V V mA Watts C C THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction-ambient Thermal Resistance, Junction-case Value 486 146 Unit C/ W C/ W ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol ICBO ICBO IEBO VCEO (*) VCBO VEBO Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Test Condition(s) VCB=45 V, IE=0 VCB=45 V, IE=0, Tj=150C VBE=5.0 V, IC=0 IC=10 mA, IB=0 IC=10 A, IE=0 IE=10 A, IC=0 Min Typ Mx Unit 60 60 6 10 10 10 1/3 nA A nA V V V COMSET SEMICONDUCTORS NPN 2N2484 Symbol Ratings Test Condition(s) IC=1 A, VCE =5 V IC=10 A, VCE =5 V IC=100 A, VCE =5 V IC=500 A, VCE =5 V IC=1mA, VCE =5 V IC=10 mA, VCE =5 V IC=10 A, VCE =5 V Min Typ Mx Unit 30 100 175 200 250 20 0.5 200 290 375 430 450 430 500 800 V hFE (*) DC Current Gain - Tamb = -55 VCE(SAT) VBE Collector-Emitter saturation Voltage Base-Emitter Voltage IC=1 mA, IB=0.1 mA IC=100 A, VCE =5 V 0.2 0.35 0.57 0.7 Symbol fT hfe CCBO CEBO Ratings Transition frequency Small signal current gain Collector-Base Capacitance Emitter-Base Capacitance Test Condition(s) IC=50 A, VCE= 5 V f= 5 MHz IC=500 A, VCE= 5 V f= 30 MHz IC=1 mA, VCE=5.0 V f= 1 KHz IE= 0 ,VCB=5 V f = 1MHz IC= 0 ,VEB=0.5 V f = 1MHz f = 100 Hz IC= 0 f = 1 kHz VCE=5.0 V f = 10 kHz Rg = 10 k f = 10 to 10000 Hz Min Typ Mx Unit 15 60 150 20 78 400 3.5 3.5 4 1.8 0.6 1.8 MHz 900 6 6 10 3 2 3 pF pF NF Noise figure dB (*) Pulse conditions : tp < 300 s, =1% COMSET SEMICONDUCTORS 2/3 NPN 2N2484 MECHANICAL DATA CASE TO-18 DIMENSIONS mm A B D E F G H I L Pin 1 : Pin 2 : Pin 3 : 12,7 0,49 5,3 4,9 5,8 2,54 1,2 1,16 45 inches 0,5 0,019 0,208 0,193 0,228 0,1 0,047 0,045 45 Emitter Base Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3 |
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